IndiumV3, Russie, Analysis, bibRecord, 000B68

LPE growth of GaSb and Sb-based solid solutions

Identifieur interne : 000B68 ( Russie/Analysis ); précédent : 000B67; suivant : 000B69

LPE growth of GaSb and Sb-based solid solutions

Auteurs : RBID : Pascal:02-0522415

Descripteurs français

Pascal (Inist)
- Croissance cristalline, Epitaxie phase liquide, Couche mince, Gallium antimoniure, Aluminium antimoniure, Aluminium arséniure, Gallium arséniure, Indium arséniure, Indium antimoniure, Solution solide, Composition chimique, Accommodation réseau, Perfection cristalline, Mode opératoire, Relation fabrication structure, Mobilité porteur charge, Densité porteur charge, AlGaInAsSb, Al As Ga In Sb, GaSb, Ga Sb, 8115L, 7350D, InGaAsSb, As Ga In Sb, AlGaAsSb, Al As Ga Sb.

English descriptors

KwdEn :
- Aluminium antimonides, Aluminium arsenides, Carrier density, Carrier mobility, Chemical composition, Crystal growth, Crystal perfection, Fabrication structure relation, Gallium antimonides, Gallium arsenides, Indium antimonides, Indium arsenides, LPE, Mismatch lattice, Operating mode, Solid solutions, Thin films.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00E570
to stream Main, to step Repository: 012E50
to stream Russie, to step Extraction: 000B68

Links to Exploration step

Pascal:02-0522415

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">LPE growth of GaSb and Sb-based solid solutions</title>
<author><name sortKey="De Anda, F" uniqKey="De Anda F">F. De Anda</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO-UASLP</s1>
<s2>San Luis Potosí</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>HCO-UASLP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mishurnvi, V A" uniqKey="Mishurnvi V">V. A. Mishurnvi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO-UASLP</s1>
<s2>San Luis Potosí</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>HCO-UASLP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gorbatchev, A Yu" uniqKey="Gorbatchev A">A. Yu. Gorbatchev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>HCO-UASLP</s1>
<s2>San Luis Potosí</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>HCO-UASLP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Olvera, J" uniqKey="Olvera J">J. Olvera</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CIDS-ICUAP-BUAP</s1>
<s2>Puebla, Pue.</s2>
<s3>MEX</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Mexique</country>
<wicri:noRegion>CIDS-ICUAP-BUAP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vasilev, V I" uniqKey="Vasilev V">V. I. Vasilev</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute. Russian Academy of Sciences</s1>
<s2>St. Petersburg</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>A. F. Ioffe Physico-Technical Institute. Russian Academy of Sciences</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0522415</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 02-0522415 INIST</idno>
<idno type="RBID">Pascal:02-0522415</idno>
<idno type="wicri:Area/Main/Corpus">00E570</idno>
<idno type="wicri:Area/Main/Repository">012E50</idno>
<idno type="wicri:Area/Russie/Extraction">000B68</idno>
</publicationStmt>
<seriesStmt><title level="j" type="main">Recent research developments in crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term>
<term>Aluminium arsenides</term>
<term>Carrier density</term>
<term>Carrier mobility</term>
<term>Chemical composition</term>
<term>Crystal growth</term>
<term>Crystal perfection</term>
<term>Fabrication structure relation</term>
<term>Gallium antimonides</term>
<term>Gallium arsenides</term>
<term>Indium antimonides</term>
<term>Indium arsenides</term>
<term>LPE</term>
<term>Mismatch lattice</term>
<term>Operating mode</term>
<term>Solid solutions</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Croissance cristalline</term>
<term>Epitaxie phase liquide</term>
<term>Couche mince</term>
<term>Gallium antimoniure</term>
<term>Aluminium antimoniure</term>
<term>Aluminium arséniure</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Indium antimoniure</term>
<term>Solution solide</term>
<term>Composition chimique</term>
<term>Accommodation réseau</term>
<term>Perfection cristalline</term>
<term>Mode opératoire</term>
<term>Relation fabrication structure</term>
<term>Mobilité porteur charge</term>
<term>Densité porteur charge</term>
<term>AlGaInAsSb</term>
<term>Al As Ga In Sb</term>
<term>GaSb</term>
<term>Ga Sb</term>
<term>8115L</term>
<term>7350D</term>
<term>InGaAsSb</term>
<term>As Ga In Sb</term>
<term>AlGaAsSb</term>
<term>Al As Ga Sb</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
</TEI>
<inist><standard h6="B"><pA><fA08 i1="01" i2="1" l="ENG"><s1>LPE growth of GaSb and Sb-based solid solutions</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Recent research developments in crystal growth. Vol. 2 (2000)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DE ANDA (F.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MISHURNVI (V. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GORBATCHEV (A. Yu.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>OLVERA (J.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>VASILEV (V. I.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>PANDALAI (S. G.)</s1>
</fA12>
<fA14 i1="01"><s1>HCO-UASLP</s1>
<s2>San Luis Potosí</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>CIDS-ICUAP-BUAP</s1>
<s2>Puebla, Pue.</s2>
<s3>MEX</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>A. F. Ioffe Physico-Technical Institute. Russian Academy of Sciences</s1>
<s2>St. Petersburg</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>141-177</s1>
</fA20>
<fA21><s1>2000</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA26 i1="01"><s0>81-86846-55-7</s0>
</fA26>
<fA43 i1="01"><s1>INIST</s1>
<s2>L 28239</s2>
<s5>354000108094820070</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>50 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>02-0522415</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="2"><s0>Recent research developments in crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>IND</s0>
</fA66>
<fC02 i1="01" i2="3"><s0>001B80A15L</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C50D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Croissance cristalline</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Crystal growth</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>LPE</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Gallium antimoniure</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Gallium antimonides</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Aluminium antimoniure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Aluminium antimonides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Aluminium arséniure</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium antimoniure</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Solution solide</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Solid solutions</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composition chimique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Chemical composition</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Accommodation réseau</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Mismatch lattice</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Acomodación red</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Perfection cristalline</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Crystal perfection</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Perfección cristalina</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Mode opératoire</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Operating mode</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Método operatorio</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Relation fabrication structure</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Fabrication structure relation</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Relación fabricación estructura</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Mobilité porteur charge</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Carrier mobility</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>AlGaInAsSb</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Al As Ga In Sb</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Ga Sb</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8115L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7350D</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>InGaAsSb</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>As Ga In Sb</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>AlGaAsSb</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Al As Ga Sb</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>81</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>81</s5>
</fC07>
<fN21><s1>308</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000B68 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000B68 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:02-0522415
   |texte=   LPE growth of GaSb and Sb-based solid solutions
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

LPE growth of GaSb and Sb-based solid solutions

LPE growth of GaSb and Sb-based solid solutions

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri